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TYPICAL PERFORMANCE CURVES (R)
APT40GP60B2DQ2 APT40GP60B2DQ2G*
APT40GP60B2DQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
(R)
T-MaxTM
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 400V, 41A * 200 kHz operation @ 400V, 26A * SSOA Rated
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT40GP60B2DQ2(G) UNIT Volts
600 20
@ TC = 25C
100 62 160 160A @ 600V 543 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 500
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
A nA
5-2005 050-7493 Rev A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
3000
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GP60B2DQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 40A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
4610 395 25 7.5 135 30 40 160 20 29 64 45 385 645 350 20 29 90 70 385 970 615 950 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 40A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC =400V VGE = 15V I C = 40A RG = 5
J 450
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.23 .67 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Repetitive Rating: Pulse width limited by maximum junction temperature. 7 Continuous current limited by package lead temperature/
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7493
Rev A
5-2005
TYPICAL PERFORMANCE CURVES
80 70
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
80 70 60 50 40 30 20 10 0
TJ = -55C TJ = 25C TJ = 125C
APT40GP60B2DQ2(G)
60 50 40 30 20 10 0
TJ = -55C TJ = 25C TJ = 125C
250
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C)
I = 40A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
14 12 10 8 6 4 2 0 0
IC, COLLECTOR CURRENT (A)
200
VCE = 120V
VCE = 300V
150
TJ = -55C TJ = 25C TJ = 125C
100
VCE = 480V
50
0
0
234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
20
40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge
120
140
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 20A
3.5 3 2.5 IC = 40A 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 80A IC = 40A
IC = 80A
IC = 20A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.20
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
0 -55
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
160 140 120 100 80
5-2005 050-7493 Rev A
60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
0.80 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
25 td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
100
APT40GP60B2DQ2(G)
td (OFF), TURN-OFF DELAY TIME (ns)
20
80
VGE =15V,TJ=125C
15
60
VGE =15V,TJ=25C
10
40
5 VCE = 400V
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 70 60 50 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V
0
TJ = 25C, TJ =125C RG = 5 L = 100 H
20
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 5, L = 100H, VCE = 400V
0
VCE = 400V RG = 5 L = 100 H
RG = 5, L = 100H, VCE = 400V
80
tf, FALL TIME (ns)
tr, RISE TIME (ns)
60
TJ = 125C, VGE = 15V
40
TJ = 25C, VGE = 15V
20
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EON2, TURN ON ENERGY LOSS (J) 2500 2000 1500 1000 500 0
TJ = 25C,VGE =15V
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
2000
0
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 5
G
V = 400V CE V = +15V GE R = 5
G
TJ = 125C,VGE =15V
1500
TJ = 125C, VGE = 15V
1000
500
TJ = 25C, VGE = 15V
20 40 60 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J) 3500 3000 2500 2000 1500 1000 500 0 0
Eoff,80A
= 400V V CE = +15V V GE T = 125C
J
0
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
3000
= 400V V CE = +15V V GE R = 5
G
0
SWITCHING ENERGY LOSSES (J)
Eon2,80A
Eon2,80A
2500 2000 1500 1000 500 0
Eoff,80A Eon2,40A
5-2005
Eon2,40A Eoff,40A Eon2,20A Eoff,20A
Rev A
Eoff,40A Eoff,20A
Eon2,20A
050-7493
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 IC, COLLECTOR CURRENT (A) Cies C, CAPACITANCE ( F) 1,000 500 Coes
P
180 160 140 120 100 80 60 40 20
APT40GP60B2DQ2(G)
100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction temp. (C)
RC MODEL
260
0.0106 0.00663F
Power (watts)
0.0868
0.0106F
FMAX, OPERATING FREQUENCY (kHz)
100
0.133 Case temperature. (C)
0.262F
F
50
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
20
050-7493
Rev A
5-2005
APT40GP60B2DQ2(G)
Gate Voltage
APT40DQ60
10% TJ = 125C td(on)
V CC
IC
V CE
tr 90% 5% 10%
Switching Energy
Collector Current
5% CollectorVoltage
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage td(off) CollectorVoltage 90% 10% tf
Switching Energy
TJ = 125C
A V CE 100uH IC V CLAMP B
0
Collector Current Gate Voltage
10%
AT
td(on)
J
= 125 C
DRIVER*
D.U.T.
Collector Voltage
tr
90% 5% 10%
Figure 23, Turn-off Switching Waveforms and Definitions
Collector Current 5%
Figure 24, EON1 Test Circuit
Switching Energy
050-7493
Rev A
5-2005
TYPICAL PERFORMANCE CURVES
APT40GP60B2DQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 40A Forward Voltage IF = 80A IF = 40A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT40GP60B2DQ2(G) UNIT Amps
40 63 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.0 2.5 1.7
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.1 0.05 10-5 10-4
Note:
22 25 35 3 160 480 6 85 920 20 -
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C
0.9
0.7
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.289 C/W Power (watts) 0.381 C/W Case temperature (C) 0.120 J/C 0.00448 J/C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE
050-7493
Rev A
5-2005
120 trr, REVERSE RECOVERY TIME (ns) 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC) 1200 1000 800 600 400 200 0
T = 125C J V = 400V
R
180 160 140 120 100 80 60 40 20 80A
APT40GP60B2DQ2(G)
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
40A 20A
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
80A
80A
20
15
40A
10
40A 20A
20A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 80
Duty cycle = 0.5 T = 175C
J
0
1.4
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
1.2 1.0 0.8 0.6 0.4 0.2 trr
Qrr IRRM
70 60 IF(AV) (A) 50 40 30
trr Qrr
20 10
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature
0.0
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
200
CJ, JUNCTION CAPACITANCE (pF)
180 160 140 120 100 80 60 40 20
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
Rev A
5-2005
0
1
050-7493
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT40GT60BR
APT40GP60B2DQ2(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
T-MAXTM (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7493
5.45 (.215) BSC 2-Plcs.
Rev A
Gate Collector (Cathode) Emitter (Anode)
5-2005
19.81 (.780) 20.32 (.800)

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